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Automotive 2-Phase Brushed DC B4 Pre-Driver


The Melexis MLX83100 is a two-phase pre-driver (also called bridge driver or gate driver) IC with integrated current sense amplifier. This device is used to drive brushed DC motors in combination with a microcontroller and four discrete power N-FETs.

This device is able to control four external N-FETs for full H-bridge control in the supply range from 4.5 volt to 28 volt, by means of the integrated charge pump. The high side gate drivers are supplied via bootstrap circuits. The trickle charge pump allows 100% pulse width modulation (PWM) operation despite the use of bootstrap capacitors. The bootstrap voltage regulator is optimized for gate charges up to 500 nC per FET at 20 kHz PWM.

Our MLX83100 pre-driver comprises various monitoring and protection functions, including undervoltage and overvoltage detection at multiple internal voltage nodes, over temperature detection, and drain-source and gate-source voltage monitoring of the external N-FETs. In case of fault detection, the serial ICOM diagnostics interface will inform the microcontroller with a PWM signal, where the duty cycle indicates the nature of the error.

An integrated fast, high-bandwidth, low offset current sense amplifier allows for precise torque control, with programmable gain selection.

The MLX83100 provides an EEPROM for configurability, avoiding the need for a high pin-count package. The configuration allows the customer to optimize the pre-driver’s operation for different applications.

For brushless (BL)DC applications see also the MLX83203 and MLX83202 of the same pre-driver family. For sensorless BLDC applications see also our embedded-MCU BLDC controllers MLX812xx family.
Automotive 2-Phase Brushed DC B4 Pre-Driver - MLX83100

Features and benefits

  • Converts 2 or 4 PWM inputs from a microcontroller to drive 4 external N-FETs

  • 300 mA gate drive (typical)

  • High-side N-FET driver with bootstraps and trickle charge pump for 100% PWM operation

  • Optional charge pump for low supply voltage operation

  • Charge pump configuration provides N-FET reverse polarity drive

  • Compatible with 3 V and 5 V microcontroller IO

  • Low offset, low drift, high bandwidth current sense amplifier

  • Fault interrupt and feedback to microcontroller

  • Under and overvoltage protection

  • Overtemperature protection

  • External FET drain-source VDS and gate-source VGS voltage monitoring

  • Extensive configurability in EEPROM

    • Programmable dead time: 0 to 6us

    • Programmable current sense amplifier gain: 8 to 48

    • Hardware protection settings (auto-shutdown)

    • Diagnostics settings (VDS level, masking time, ...)

    • Charge pump configuration

  • Automotive qualified:

    • AEC-Q100 grade 1 qualification (TJ=150˚C)

    • Wide supply voltage operating range: [4.5, 28] V

    • 45 V load dump

    • Sleep mode with low quiescent current (<30uA)

  • Very small footprint: 28-pin TSSOP with exposed pad
Used in these


  • Automotive - Transmission
  • Automotive - Powertrain
  • Automotive - Hybrid & Electric Powertrain
  • Automotive - Body, HVAC, Comfort & Lighting
  • Automotive - Chassis & Safety
  • Industrial & Robotics
  • Non-Automotive Transportation

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Inspired Engineering

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